Refractoriness (℃): | 1770< Refractoriness< 2000 |
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Feature: | Long Time Materials |
Type: | Refractory Material |
Shape: | Plate |
Material: | Silicon Carbide (SiC) |
Silicon Carbide: | 50--99% |
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Characteristics | Units | Typical Values | Limited Values | ||
SIC | % | 95 | ≥92 | ||
Bulk Density | g/cm 3 | 2.60 | ≥2.55 | ||
Apparent Porosity | % | 18 | ≤19 | ||
Cold compressive strength | Mpa | 110 | ≥80 | ||
Thermal shock | w/m.k | excellent | excellent | ||
Modulus of rupture at normal temperatures | Mpa | 25 | ≥18 | ||
Modulus of rupture at elevated temperatures | Mpa | 16 | ≥15 | ||
Chemical Composition | SiC | 95% | |||
SiO2 | 0.2% | ||||
Al2O3 | 3% | ||||
Fe2O3 | 0.2% |
Parameter | SSiC | RBSiC |
Purity( % ) | >98 | >90 |
Hardness( HRA ) | ≥92 | ≥90 |
Grain Size( um ) | 0.5~0.7 | 8~20 |
Density( g/cm3 ) | 3.10~3.15 | 3.03~3.08 |
Bend Strength( MPa ) | 400-580 | 350-450 |
Compressive Strength(MPa) | >2200 | >2000 |
Fracture Toughness( MPA ) | 3.05-4.6 | 4.3 |
Elastic Modulus( GPa ) | >400 | >360 |
Thermal Conductivity(W/M.K) | 100~120 | 50~100 |
Coefficient of heat Expansion( L/°C ) | 4.02x10-6 | 4.3x10-6 |
Poisson Ratio | 0.14 | 0.15 |
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